Hi Colin, Interesting reading your techniques on DL. I was trying to understand what you said about tying fets together with a source schottky and another to the drain. My mind seems to work best with pictures though and I can’t quite picture what you mean. Any diagrams would be good! I like the super diode made up of zero crossing detector and fets, that would result in very low dissipation as you say. So you worked in the military as an electronic engineer? I’m not an engineer, just a tech. Also been reading up on the skin effect, thanks for the links! Regards, Colin.
Ok thanks for that, I thought you meant more than 1 fet. Quote Colin W from DL: “ Then I tied FET,s with a series Schottky in the source and around from the cathode to the drain of the FET another Schottky diode, this technique is in use manly in Full Bridge Resonant SMPSU (50KW +) designs and allows you to reduce the heat in the body diode of the FET thus keeping the RDoN lower at higher temperatures, but the added side effect on the device is you reduce the load capacitance and get better BW. OK you have VF on the conducting diode of as low as 0.2V but it is worth trying. The diode only needs to be a 15V type, and I suspect the new SiC are even better. Now you could add a series FET with a zero crossing detector and thus making a super diode. This I have also tried in bridge rectifier and it has been copied many time now, I first used it on a cruises missile in the early 1990 and had VF of 10mV at 50Amps.And in a six phase power system that mean a much smaller heatsink, more room for the bang stuff.”